GA‑355‑100mW – 355 nm Laser for Marking
The GA-355-100mW is a 355 nm UV laser source designed for high-precision laser marking and micro-processing applications. Featuring high peak power, short pulse duration, and a high repetition rate, this passively Q-switched laser delivers excellent performance for demanding industrial and scientific tasks. With a TEM₀₀ beam profile, low beam divergence, and high polarization purity, the GA-355-100mW ensures fine feature resolution and stable processing quality. Its compact design and fast warm-up time make it ideal for laser marking systems, 3D marking, sub-surface engraving, instrumentation, and biological research.
Features
- 355 nm UV laser source for laser marking
- Passively Q-switched operation
- Short pulse duration (~3 ns)
- High peak power (up to 15 kW)
- High repetition rate (~20 kHz)
- Excellent beam quality (TEM₀₀)
- Low beam divergence (~1 mrad)
- High polarization ratio (>100:1)
- Compact and stable design
- Fast warm-up time (<15 minutes)
Applications
- Laser marking and engraving
- 3D laser marking
- Sub-surface engraving
- Precision micro-processing
- Scientific research
- Biology and instrumentation
- OEM laser marking systems
Specifications
| Parameter | Specification |
|---|---|
| Wavelength | 355 ± 1 nm |
| Operating Mode | Passively Q-switched |
| Average Power | 1 – 1000 mW |
| Single Pulse Energy | 1 – 40 µJ |
| Pulse Duration | ~3 ns |
| Peak Power | 1 – 15 kW |
| Repetition Rate | ~20 kHz |
| Transverse Mode | TEM₀₀ |
| Beam Divergence (full angle) | ~1.0 mrad |
| Beam Diameter at Aperture (1/e²) | ~6.0 mm |
| Polarization Ratio | >100:1 (Vertical) |
| Beam Height from Base Plate | 23.5 mm |
| Warm-up Time | <15 minutes |
| Operating Temperature | 10 – 35 °C |
| Power Supply | 12 V DC (QDI-GA-GFS / QDI-GA-PRZ, 12V/25A) |
Download
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