RA-532-1.5E
The RA-532-1.5E series is a high-performance passively Q-switched 532 nm laser designed for applications requiring high peak power, short pulse duration, and excellent beam quality. Its optimized pulse characteristics make it ideal for precision marking and sub-surface engraving on glass, crystal, and other transparent materials, as well as for specialized scientific and industrial use.
Features
- High peak power and short pulse duration for clean, precise processing
- Stable performance with selectable power stability levels
- Compact air-cooled design with fast warm-up time
- Suitable for transparent materials where low thermal damage and high localized energy density are required
Applications
- Diamond engraving
- Metal & steel marking
- IC and semiconductor processing
- Plastic marking
- Precision micromachining
- Photonics and scientific research
Specifications
| Parameter | Specifications |
|---|---|
| Wavelength (nm) | 532 ± 1 |
| Operating Mode | Passively Q-switched |
| Average Power (mW) | >3000 |
| Single Pulse Energy (µJ) | 100–150 |
| Pulse Duration (ns) | ~5 |
| Peak Power (kW) | 16–20 |
| Repetition Rate (kHz) | 20–30 (optimized for high peak-power applications) |
| Power Stability (8 hours) | <1%, <3%, <5% |
| Transverse Mode | TEM00 |
| Beam Divergence (mrad) | <1.5 |
| Beam Diameter (1/e², mm) | ~1.5 |
| Warm-up Time (min) | <10 |
| Beam Height (mm) | 84 |
| Operating Temperature (°C) | 10–35 |
| Power Supply (90–264 VAC) | QDI-SPZ-D (2I), QDI-E-ARF(N) |
| Cooling System | Air |
| Expected Lifetime (hours) | 20,000 |
| Warranty | 1 year |
| Pilot Light | <5 mW @ 650 nm |
Download
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