SP-532E
The SP-532E is an all-solid-state AOM Q-switched laser operating at 532 nm, delivering high peak power, short pulse durations, and high repetition rates. With excellent TEM₀₀ beam quality, low divergence, and a high polarization ratio, the SP-532E provides precise, high-contrast marking suitable for industrial and scientific applications.
Features
- 532 nm green output wavelength
- High average power up to 40 W
- All-solid-state AOM Q-switched architecture
- High single-pulse energy (up to >600 µJ)
- Short pulse width (~10–13 ns)
- High repetition rate (20–200 kHz)
- Excellent beam quality (TEM₀₀, M² <1.2)
- High beam circularity (>90%)
- Polarization ratio >100:1, vertical
- Water-cooled for stable high-power operation
Applications
- Marking highly reflective metals (gold, silver)
- Semiconductor marking (Si, GaAs, Ge)
- Silicone and rubber marking
- Industrial precision laser processing
- Scientific research and material studies
Specifications
| Parameter | Specification |
|---|---|
| Wavelength (nm) | 532 ±1 |
| Operating Mode | Acousto-Optic Q-switched |
| Average Power (W) | 8 W @30 kHz; 10 W @30 kHz; 20 W @50 kHz; 40 W @60 kHz |
| Single Pulse Energy (µJ) | >300 µJ @30 kHz; >400 µJ @50 kHz; >600 µJ @60 kHz |
| Repetition Rate (kHz) | 20–200; 40–150; 50–200 |
| Pulse Width (ns) | ~12 @30 kHz; ~10 @50 kHz; ~13 @60 kHz |
| Transverse Mode | TEM₀₀ |
| Beam Circularity (%) | >90 |
| Beam Quality (M²) | <1.2 |
| Beam Divergence, Full Angle (mrad) | <3.5 |
| Beam Diameter at Aperture (1/e², mm) | ~0.8 |
| Polarization Ratio | >100:1, Vertical |
| Beam Height from Base Plate (mm) | 60; 59; 90 |
| Warm-up Time (minutes) | <10 |
| Cooling Method | Water Cooled |
| Operating Temperature (°C) | 10–35 |
| Supply Voltage | DC12V/25A (QDI-12/QDI-12-Q optional); DC24V/13A (QDI-24/QDI-24-Q optional) |
Download
Download data sheet
