SP-532N-AZ
The SP-532N-AZ is an all-solid-state AOM Q-switched laser operating at 532 nm, designed for high-precision marking of hard and reflective materials. Its combination of high peak power, short pulse duration, and excellent beam quality makes it ideal for:
Highly reflective metals such as silver and gold
Semiconductors including silicon, gallium arsenide (GaAs), and germanium
Rubbers and silicone materials
Features
- Green laser at 532 nm
- High single-pulse energy (>600 µJ @5 kHz)
- Short pulse duration (~10 ns)
- Low-divergence, high-quality TEM₀₀ beam
- Beam circularity >90%
- High polarization ratio (>100:1, vertical)
- Repetition rate: 1–5 kHz
- Air-cooled design for stable operation
- Compact footprint, fast warm-up (<10 min)
Applications
- Marking highly reflective metals (gold, silver)
- Semiconductor processing (Si, GaAs, Ge)
- Silicone and rubber marking
- Industrial micro-machining
- Precision laser processing for research or production
Specifications
| Parameter | Specification |
|---|---|
| Wavelength (nm) | 532 ±1 |
| Operating Mode | Acousto-Optic Q-switched |
| Average Power (W) | 3 W @5 kHz |
| Single Pulse Energy (µJ) | >600 µJ @5 kHz |
| Repetition Rate (kHz) | 1–5 |
| Pulse Width (ns) | ~10 @5 kHz |
| Transverse Mode | TEM₀₀ |
| Beam Circularity (%) | >90 |
| Beam Quality (M²) | <1.2 |
| Beam Divergence, Full Angle (mrad) | <0.2 |
| Beam Diameter at Aperture (mm) | 8 ±1 |
| Polarization Ratio & Direction | >100:1, Vertical |
| Beam Height from Base Plate (mm) | 79 |
| Warm-up Time (minutes) | <10 |
| Cooling Method | Air Cooled |
| Operating Temperature (℃) | 10–35 |
| Supply Voltage | DC 12V / 25A (optional) |
Download
Download data sheet
