SP-532N
The SP-532N is an all-solid-state AOM Q-switched laser operating at 532 nm, designed for high-precision marking of hard and reflective materials. It provides high peak power, short pulse durations, and excellent beam quality, making it ideal for:
Highly reflective metals such as silver and gold
Semiconductors including silicon, gallium arsenide (GaAs), and germanium
Rubbers and silicone materials
The TEM₀₀ beam profile, low divergence, and vertical polarization ensure precise, clean markings on challenging materials with minimal thermal impact.
Features
- Green laser at 532 nm
- High single-pulse energy (>1 mJ @1 Hz–1 kHz; >600 µJ @1–5 kHz; >300 µJ @5–10 kHz)
- Short pulse duration (~10–18 ns depending on repetition rate)
- Low-divergence TEM₀₀ beam
- Beam circularity >90%
- High polarization ratio (>100:1, vertical)
- Repetition rate: 1 Hz–10 kHz
- Air-cooled design for stable operation
- Compact footprint, fast warm-up (<10 min)
Applications
- Marking highly reflective metals (gold, silver)
- Semiconductor processing (Si, GaAs, Ge)
- Silicone and rubber marking
- Industrial micro-machining
- Precision laser processing for research or production
Specifications
| Parameter | Specification |
|---|---|
| Wavelength (nm) | 532 ±1 |
| Operating Mode | Acousto-Optic Q-switched |
| Average Power (W) | 1 mW @1 Hz; 1 W @1 kHz / 3 W @5 kHz / 3 W @10 kHz |
| Single Pulse Energy (µJ) | >1 mJ @1 Hz–1 kHz / >600 µJ @1–5 kHz / >300 µJ @5–10 kHz |
| Repetition Rate (kHz) | 1 Hz–10 kHz |
| Pulse Width (ns) | ~10 @1 Hz–1 kHz / ~12 @1–5 kHz / ~18 @5–10 kHz |
| Transverse Mode | TEM₀₀ |
| Beam Circularity (%) | >90 |
| Beam Quality (M²) | <1.2 |
| Beam Divergence, Full Angle (mrad) | <3.5 |
| Beam Diameter at Aperture (1/e², mm) | ~0.8 |
| Polarization Ratio & Direction | >100:1, Vertical |
| Beam Height from Base Plate (mm) | 79 |
| Warm-up Time (minutes) | <10 |
| Cooling Method | Air Cooled |
| Operating Temperature (℃) | 10–35 |
| Supply Voltage | DC 12V / 25A (QDI-12/ QDI-12-Q optional) |
Download
Download data sheet
