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ZFA-R-808 Narrow Linewidth Diode Laser at 808 nm

The ZFA-R-808 narrow linewidth diode laser at 808 nm delivers exceptional wavelength stability, high beam quality, and reliable CW operation. With spectral linewidth down to <0.03 nm (optional), near TEM00 mode, and output power up to 20 mW, it is ideal for precision spectroscopy, metrology, Raman analysis, and scientific instrumentation requiring stable and coherent laser sources.

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Features
  • Narrow spectral linewidth <0.06 nm (<0.03 nm optional) for high spectral resolution
  • Stable wavelength at 808 ± 0.5 nm
  • Continuous Wave (CW) operation for precise and stable measurements
  • Near TEM00 transverse mode with excellent beam quality (M² <1.5)
  • Output power options from 1 mW to 20 mW
  • High polarization ratio up to >100:1 (optional)
  • Long operational lifetime up to 10,000 hours with minimal maintenance
Applications
  • Raman spectroscopy and high-resolution spectroscopy
  • Precision optical measurement and metrology
  • Scientific research and laboratory instrumentation
  • Laser-based sensing and optical diagnostics
  • Optical pumping applications
  • Semiconductor and material characterization
  • Interferometry and optical testing
Specifications
Parameter Specification
Model ZFA-R-808
Laser type Narrow linewidth diode laser
Central wavelength 808 ± 0.5 nm
Operating mode Continuous Wave (CW)
Output power >1, 2, 3, …, 20 mW
Spectral linewidth <0.06 nm (<0.03 nm optional)
Power stability (RMS, 4h) <3%, <2%, <1%
Transverse mode Near TEM00
Beam quality factor (M²) <1.5
Beam diameter at aperture (1/e²) ~3.5 mm
Beam divergence (full angle) <1.5 mrad
Polarization ratio >50:1 (>100:1 optional)
Polarization direction Horizontal ±5° (Vertical optional)
Warm-up time <5 minutes
Beam height from base 30 mm
Operating temperature 20 – 30 °C
Power supply QDI-S-F (100-240 VAC)
Expected lifetime 10,000 hours
Warranty 1 year