ZFA-R-830 Narrow Linewidth Diode Laser at 830 nm
The ZFA-R-830 narrow linewidth diode laser at 830 nm provides exceptional wavelength stability, high beam quality, and reliable CW performance. With spectral linewidth down to <0.03 nm (optional), TEM00 beam profile, and output power up to 30 mW, this laser is ideal for high-resolution spectroscopy, precision metrology, interferometry, and advanced scientific instrumentation.
Features
- Narrow spectral linewidth <0.06 nm (<0.03 nm optional)
- Stable central wavelength at 830 ± 0.5 nm
- Continuous Wave (CW) operation for stable measurements
- Near TEM00 transverse mode with M² <1.5
- Output power selectable from 1 mW up to 30 mW
- High beam quality with low divergence (<1.5 mrad)
- Long operational lifetime up to 10,000 hours
Applications
- High-resolution spectroscopy
- Raman spectroscopy systems
- Precision optical metrology
- Interferometry and coherence measurements
- Optical sensing and diagnostics
- Semiconductor and material characterization
- Scientific laboratory instrumentation
Specifications
| Parameter | Specification |
|---|---|
| Model | ZFA-R-830 |
| Laser Type | Narrow linewidth diode laser |
| Central Wavelength | 830 ± 0.5 nm |
| Operating Mode | Continuous Wave (CW) |
| Output Power | >1, 2, 3, …, 30 mW |
| Spectral Linewidth | <0.06 nm (<0.03 nm optional) |
| Power Stability (RMS, 4h) | <3%, <2%, <1% |
| Transverse Mode | Near TEM00 |
| Beam Quality (M²) | <1.5 |
| Beam Diameter at Aperture (1/e²) | ~3.5 mm |
| Beam Divergence (Full Angle) | <1.5 mrad |
| Polarization Ratio | >10:1 (>50:1 optional) |
| Polarization Direction | Horizontal ±5° (Vertical optional) |
| Warm-up Time | <5 minutes |
| Beam Height from Base Plate | 30 mm |
| Operating Temperature | 20 – 30 °C |
| Power Supply | QDI-S-F (100–240 VAC) |
| Expected Lifetime | 10,000 hours |
| Warranty | 1 year |
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